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Reply To: | TechNet E-Mail Forum. |
Date: | Fri, 6 Apr 2001 11:45:16 +0300 |
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Eric
As you seem to be working with resist-on-copper, I suggest you use a
copper chloride acid etchant, with replenishment of hydrogen peroxide
according to the redox. This should cure your problem.
Brian
Eric Masters wrote:
>
> I am having some difficulty with dryfilm breakdown on heavy copper
> etching.
> I have tried a number of different films, and they all work on copper
> weights
> less than 3 ounces. Above three ounces, I begin to have breakdown
> issues in
> the etch replenisher chamber.
>
> I have maximized all the process parameters for dryfilm: surface
> prep,
> lamination exit temperature, exposure, and developing. I am convinced
> that
> the problem lies with the etching chemistry, but I'm not sure what
> parameter
> contributes most to breakdown.
>
> Does anyone know which component is the most troublesome? or is it a
> combination of things? I've tried varying pH, copper concentration,
> chlorides, and controlling free ammonia in the replenishment chamber.
> Any
> suggestions will be appreciated.
>
> Thanks.
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