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August 1998

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Subject:
From:
Bill Davis <[log in to unmask]>
Reply To:
TechNet E-Mail Forum.
Date:
Fri, 7 Aug 1998 16:34:18 -0700
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text/plain
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Joe-
Is the nature of the damage physical (e.g., dislocations/twinning) or is
it parametric? When will Dr. Haba have his papaer out & in what venue?

> *********************************
> Bill Davis, Ph.D.
> Diamond Multimedia Systems
> Senior Scientist
> Tel. 408.325.7868
> Cell. 408.888.5650
> e-mail: [log in to unmask]
> ********************************
>
>
>
> -----Original Message-----
> From: Joseph Fjelstad [SMTP:[log in to unmask]]
> Sent: Friday, August 07, 1998 4:09 PM
> To:   [log in to unmask]
> Subject:      [TN] Laser marking of die concern
>
> For those interested, one of our staff scientists has noted that
> failures
> can be induced by marking the back side of die with appears to be a
> laser
> of the wrong wavelength. One of the most common wave lengths presently
> used
> is also one that transmits the greatest amount of energy though the
> die
> with a high potential for damaging the active circuitry on the
> opposing
> side. This is due to silicon's near transparency to the given wave
> length
> (1064nm). The study was done by Dr. Belgacem Haba. While the study
> will be
> part of a forthcoming technical article, we thought it could be of
> significance to those presently involved in packaging and marking IC's
> and
> to give the industry and early "heads up". If you have interest or
> need for
> more detail, please contact either me or Dr. Haba direct at
> [log in to unmask]
>
> Regards to all,
> J. Fjelstad
>
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