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April 1998

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Subject:
From:
"Leslie O. Connally" <[log in to unmask]>
Reply To:
Leslie O. Connally
Date:
Fri, 3 Apr 1998 09:07:23 -0800
Content-Type:
text/plain
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text/plain (65 lines)
Hi Tomer,

I don't know what Russel Smith's problem is with the HCl H2O2 regeneration is:
we have been doing Cupric Chloride etching with this Regen system for over 18
years now. The Chlorine generation only happens when the ORP
( Oxidation/Reduction potential)goes very high around 700 to 900. The basic
etching equation is:
 Cu + CuCl2 + 2H2O ---> 2CuCl + 2H2O
Likewise the Regeneration reaction is:
 2CuCl + 2HCl +H2O2 ---> 2CuCl2 + 2H2O.

It is possible to operate at different Normalaties, for production reasions we
chose to operate at 2.6 N. We control the ORP at 540 Millivolts which is at a
plateau that keeps the Etch rate stable.

An excellent resource for this type of etching is Don Ball who has done a lot
of basic work on this type of System. He is at The ATO-Tech faciility at State
College, Pa. Several papers have been written by him and others on this
subject.
There should be a delay timing between the HCL adds and H2O2 adds to prevent
the generation of chlorine. This is dwesigned into our system. If you would
like to know more about this contact me direct off line. The system is an
excellent one, and has been working well these 18 years with some improvements
over the Years.

Les Connally
X1Les@ TI.com

>  From: Tomer_2 <[log in to unmask]>, on 4/2/98 2:39 PM:
>  Technetters,
>
>  I'm in the process of gathering information on Acid Etching,
>
>  Hence I'm looking for any reference information, articles etc.
>
>
>  The compositions of the solution ( we intend to use )are Hcl and H2O2.
>
>  What is the basic etching reaction ?
>
>  What is the basic differences between Acid and Alkaline Ammonia  etching
>  ( Etching rate, etc.) ?
>
>  Any recommendation for the make up and operating procedures ?
>
>  Any user experience of basic well known problems, we supose to meet ?
>
>  Any response would be appreciated.
>
>  Tomer
>
>

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