 
| Received: |
by ipc.org (Smail3.1.28.1 #2)
id m0u4AcS-00007aC; Tue, 2 Apr 96 12:15 CST |
| Encoding: |
21 Text |
| From [log in to unmask] Wed Apr 3 17: |
43:57 1996 |
| Old-Return-Path: |
|
| Date: |
Tue, 02 Apr 96 13:23:36 CST |
| Precedence: |
list |
| Resent-From: |
|
| Resent-Sender: |
|
| X-Status: |
|
| Status: |
O |
| X-Mailing-List: |
|
| TO: |
|
| Return-Path: |
<TechNet-request> |
| Resent-Message-ID: |
<"TYaGC.0.aRF.NxMOn"@ipc> |
| Subject: |
|
| From: |
|
| X-Loop: |
|
| Message-Id: |
|
| Parts/Attachments: |
|
|
My previous response did not get through, so here goes -
I have not seen any reference to the field intensity of the x-ray.
Although I have no experience with X-ray techniques for excessive
Sn/Pn migration, I would have to be absolutely convinced from an
independent source - publication, standard, research paper, etc.,
that xray techniques are allowed.
Depending upon the level of field intensity, flooding
semiconductor material with x-rays can:
1. Knock electrons loose create current flow and voltage
potentials on an unconnected board.
2. Introduce interstitial defects in semiconductor material.
Doug McKean ADC Video Systems
[log in to unmask]
|
|
|
