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June 2008

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Subject:
From:
Werner Engelmaier /* <[log in to unmask]>
Reply To:
TechNet E-Mail Forum <[log in to unmask]>, [log in to unmask]
Date:
Mon, 23 Jun 2008 09:30:25 EDT
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Hi Vladimir,
You write:
"That is obviously your choice but I'd prefer to stick with mine :-)"—but I 
have not seen your succinct definition.
You write: 
"Be careful with using/interpreting EDS for fracture surfaces. It's NOT that 
straight forward. EDS cannot be used to do it. There are several reasons and 
the major ones are depth of penetration and the surface topography."
In the meantime I got the following input:
"Given that the regions of phosphorus enrichment that are typically reported 
at ENIG interfaces are in the range of 50 - 100 Angstroms, and that, at 
typical accelerating voltages, EDS sampling depths are in the 1000+ Angstrom range, 
EDS measurements would be of bulk deposit composition, not interfacial."

Is this what you were telling me?

Werner



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