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October 2007

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Subject:
Re: Silicon Solar Cells
From:
Leo Higgins <[log in to unmask]>
Reply To:
TechNet E-Mail Forum <[log in to unmask]>, Leo Higgins <[log in to unmask]>
Date:
Fri, 26 Oct 2007 09:51:59 -0700
Content-Type:
text/plain
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text/plain (62 lines) 
Hi Werner,
    There are many configurations and assemblies:  amorphous bulk silicon (older technology), polycrystalline bulk silicon, thin film Si on a variety of substrates, etc.   High purity bulk polycrystalline Si will have the ~ same CTE as single crystal Si, so the CTE values should be similar to 2.618 ppm / degree K at 300 degrees K, 3.128 at 375 K, 3.453 at 450 K, and 3.610 at 500 K.  Modulus of elasticity of bulk polycrystalline Si will be microstructure dependent, and the values may be different for thin film polycrystalline Si.  Single crystal Si modulus of elasticity at room temp is about 155 GPa, and I have seen values for polycrystalline Si structures used for MEMS elements at between 132 - 152 GPa. So more info is needed. 



Best regards,
Leo

          
Leo M. Higgins III, Ph.D.
Sr. Vice President, Engg and Technology
ASAT, Inc. 
13809 Research Blvd., Suite 635
Austin, Texas     78750

office phone   512-249-4758
mobile           512-423-2002
[log in to unmask]
www.asat.com



-----Original Message-----
From: TechNet [mailto:[log in to unmask]]On Behalf Of Werner Engelmaier /*
Sent: Friday, October 26, 2007 10:43 AM
To: [log in to unmask]
Subject: [TN] Silicon Solar Cells


Hi,
Would anybody have the modulus of elasticity and coefficient of thermal 
expansion for silicon solar cells?



Werner



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