Hi Werner,
There are many configurations and assemblies: amorphous bulk silicon (older technology), polycrystalline bulk silicon, thin film Si on a variety of substrates, etc. High purity bulk polycrystalline Si will have the ~ same CTE as single crystal Si, so the CTE values should be similar to 2.618 ppm / degree K at 300 degrees K, 3.128 at 375 K, 3.453 at 450 K, and 3.610 at 500 K. Modulus of elasticity of bulk polycrystalline Si will be microstructure dependent, and the values may be different for thin film polycrystalline Si. Single crystal Si modulus of elasticity at room temp is about 155 GPa, and I have seen values for polycrystalline Si structures used for MEMS elements at between 132 - 152 GPa. So more info is needed.
Best regards,
Leo
Leo M. Higgins III, Ph.D.
Sr. Vice President, Engg and Technology
ASAT, Inc.
13809 Research Blvd., Suite 635
Austin, Texas 78750
office phone 512-249-4758
mobile 512-423-2002
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www.asat.com
-----Original Message-----
From: TechNet [mailto:[log in to unmask]]On Behalf Of Werner Engelmaier /*
Sent: Friday, October 26, 2007 10:43 AM
To: [log in to unmask]
Subject: [TN] Silicon Solar Cells
Hi,
Would anybody have the modulus of elasticity and coefficient of thermal
expansion for silicon solar cells?
Werner
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