I've gotten reports of attachment problems, so here is the text alone
without the two figures.
Rick
for “Embedded Passive Update” column, CircuiTree, July 2005
My Capacitor Can Beat Up Your Capacitor
Rick Ulrich
One of the reasons for switching from surface mount passives to
embedded is the claim that the latter exhibits less parasitic
electrical behavior. Ideally, a given passive would be a pure
component; a resistor would show only resistance without any hint of
capacitance or inductance. But, in reality, each passive always has
some amount of the other two, and these tend to become apparent at
certain frequencies. Comparing the electrical performance of surface
mount and embedded resistors reveals that their parasitcs are not
very different. Same for inductors. What improvement there is for
embedded R's and L's comes not from the components themselves being
purer, but because some or all horizontal and, especially, vertical
interconnections may be eliminated.
However, embedded capacitors can exhibit far less parasitic
inductance than SM caps, and this is a very important advantage for
some applications, especially decoupling. Parasitic inductance
causes any capacitor, SM or embedded, to cease being a cap and become
an inductor above some frequency. The significantly lower parasitic
inductance of the embedded capacitor expands the useful frequency
range relative to a SM part.
There are two reasons for this, and the first is related to the
connection issue mentioned above. Figure 1 shows how inductive vias
and traces can be eliminated by placing the dielectric directly in
between the power and ground plane instead of inside a SM package on
top of the board. This distributed capacitance has been known and
used for decades, but a few mils of FR4 provides very little
capacitance density, less than 0.1 nF/cm2. The challenge today is to
place higher k and thinner materials in this space.
Figure 1. Decreased parasitic inductance due to eliminating
interconnects to the capacitor.
The other effect has to do with the reduction of the self-inductance
of the structure by mutual inductance. In the conventional SM
capacitor on the left side of Figure 2, current travels from left to
right in the plates of both polarities. In the embedded capacitor on
the right, the connections to the plates are arranged so that current
flows in opposite directions in the plates, thereby canceling some of
the structure’s self-inductance by mutual inductance. The fields for
the SM add, and the fields for the embedded capacitor cancel.
Figure 2. Field cancellation in embedded capacitors
The result is a return circuit, which can be shown to have an
inductance that is directly proportional to the thickness of the
dielectric. This is best expressed in Henrys/square just as
resistance can be expressed in W/square. For a parallel plate
embedded capacitor with the current entering and leaving the same
side and the contacts distributed over that entire side so there is
no spreading inductance,
parasitic inductance in pH/square = 1.26(dielectric thickness in
microns)
If this were the only significant source of inductance, then using a
50% thinner dielectric would give a 41% higher self-resonance
frequency, while simultaneously doubling the capacitance. The makers
of SM low-ESL capacitors are utilizing this principle by shepherding
currents in their parts to achieve at least some degree of field
cancellation, at higher cost associated with the more complex
interior structure that is required.
The total parasitic inductance of an installed capacitor is the sum
of the conductor to reach it (interconnects and vias), the contacts
to the device, and the inductance of the part itself. Embedded
structures eliminate the first one and, if multiple or line contacts
are used, can result in a part that has almost immeasurably small
inductance, less than around 10 pH, far below that of even expensive
low-inductance SM parts. Decoupling is as much about inductance as
it is capacitance, and the inherent performance advantages of
embedded capacitors gives them a clear edge in local power management
for high-current IC’s.
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