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July 2004

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Subject:
From:
David Gowlett <[log in to unmask]>
Reply To:
(Leadfree Electronics Assembly Forum)
Date:
Wed, 14 Jul 2004 13:44:43 +0100
Content-Type:
text/plain
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text/plain (206 lines)
Dear Pascal,

The intermetallic layer is very brittle, any forming operation after plating
could cause this layer to crack. The forming operation could also increase
the stress in the tin deposit.

Do you carry out an additional postbake after such operations?


Best regards,
David Gowlett
Palmer Plating Ltd
Cirencester


-----Original Message-----
From: Leadfree [mailto:[log in to unmask]] On Behalf Of
[log in to unmask]
Sent: 14 July 2004 12:53
To: [log in to unmask]
Subject: Re: [LF] Whisker test

Dear Victor and other LF subscibers

The postbake process (as indicated in an earlier mail I prefer postbake as
name) has the following theory behind it (We only apply it for Cu based
leadframes):
   At this higher temperature the intermetallic will form by bulk diffusion
   instead of grain boundary diffusion, taking place at ambient
   temperatures. This bulk diffusion will result in a more regular layer
   (in our view the irregular Cu6Sn5 formed at ambient temperatures is the
   main cause for stress in the plating layer);
   Because of the higher temperature a double layer of Cu3Sn and Cu6Sn5
   will form;
   Because of the higher temperature recrystallization will take place,
   making the Sn grains larger and thus result in less grain boundaries;
   The intermetallic layer formed by this postbake will form a diffusion
   barrier against further irregular growth at ambient temperatures by
   grain boundary diffusion;
   If, and only if, there should be any stress in the plating it will be
   reduced by the postbake step. This is not the principal goal of the
   postbake step.

It is essentail to perform this postbake directly after plating. Within
Philips we specify within 24 hours after plating. Otherwise irregular
intermetallics might already have grown.
It should also be noted that the postbake step doesn't influence whisker
growth in temperature cycling process since this, in our view, is caused by
the mismatch between leadframe material and the Sn plating. The postbake
doesn't change the coefficient of thermal expansion.

You can find more information in several conf. proceedings, e.g. ECTC2003,
IPC/JEDEC Pb free conference San Jose 2004  and IP/Soldertec Pb free in
Amsterdam 2004 by Marc Dittes (Infineon) , Paolo Crema (STMicroelectronics)
and myself.

With kind regards,

Pascal
------------------------------------------------------------------
Dr. ir. P. Oberndorff
Philips CFT, SAQp 233
Process Technology/ Electronic Packaging & Thin Film
P.O. Box 218
5600 MD Eindhoven
Tel: +31 (0)40 27 32223
fax: +31 (0)40 27 36815
e-mail: [log in to unmask]




                                                    To:   [log in to unmask]
                                                    cc:   (bcc: Pascal
Oberndorff/EHV/CFT/PHILIPS)
                                                    Subject:    Re: [LF]
Whisker test

               "Victor G. Hernandez"                Classification:
               <[log in to unmask]
               COM>

               Sent by:
               Leadfree
               <[log in to unmask]>

               2004-07-14 01:02 PM
               Please respond to
               "(Leadfree Electronics
               Assembly Forum)"; Please
               respond to
               Victor_G_Hernandez






Fellow TechNetter:

   Can someone share their understanding of the annealing process of
metals.

Victor,

-----Original Message-----
From: Leadfree [mailto:[log in to unmask]] On Behalf Of Gupta, Munish
Sent: Wednesday, July 14, 2004 3:46 AM
To: [log in to unmask]
Subject: [LF] Whisker test


14  july  04


Need  expert inputs  only...


Is  whisker  mitigation  strategy*  applicable  for  all  packages.


A  big  package  like  TO220  where  leads  are  seperated  by  a  large
distance (much  greater  than  what  a  typical  length  of  whisker  is
:
50um)  should  NOT  undergo  special  tests  like  annealing.

Annealing  is  time  as  well  as  energy  consuming.



*: bake  for  150C  @  1hr

advised  by  ST , Philips , Infenion



Any  comments  TONY ! ! !


regards
munish
INDIA

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