Mr. Hillman and I are currently having a running debate on the reasons for
differing bond pull strengths on silicon die. Do any of you out there have
an experience with high resistivity water (e.g. 18 megohm-cm) degrading
bondability of Al2O3 bond pads? We see poorer bonding at high resistivity
than we do at lower resistivity rinse water. One theory is that the
aggressive DI water causes a thicker oxide layer, hence poorer bonding.
Any papers on this topic?
Doug Pauls
Rockwell Collins
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