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Date: | Tue, 02 Apr 96 13:23:36 CST |
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My previous response did not get through, so here goes -
I have not seen any reference to the field intensity of the x-ray.
Although I have no experience with X-ray techniques for excessive
Sn/Pn migration, I would have to be absolutely convinced from an
independent source - publication, standard, research paper, etc.,
that xray techniques are allowed.
Depending upon the level of field intensity, flooding
semiconductor material with x-rays can:
1. Knock electrons loose create current flow and voltage
potentials on an unconnected board.
2. Introduce interstitial defects in semiconductor material.
Doug McKean ADC Video Systems
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