MICRO- AND NANO- ENGINEERING (MNE) 1996
(Formerly ME Microcircuit Engineering)
September 23-25 1996
Glasgow, Scotland
First Call For Papers
Further Information can be found via the internet:
http://www.elec.gla.ac/~spb/mne96/mne96.html
MNE, MICRO- and NANO- ENGINEERING (formerly ME, Microcircuit engineering)
is an international conference on micro and nanofabrication using
lithography and related techniques. The aim of the conference is to bring
together engineers and scientists from all over the world in the field of
fabrication and application of Micro- and Nanostructures to discuss recent
progress and future trends.
MNE'96 will be held at the University of Glasgow, Scotland, United Kingdom.
It will be the 22nd in a series that started in Cambridge in 1975, followed
by meetings in Aachen, Paris, Cambridge, Amsterdam, Lausanne, Grenoble,
Berlin, Rotterdam, Interlaken, Vienna, Leuven, Rome, Erlangen, Maastricht,
Davos and Aix en Provence.
PROVISIONAL TECHNICAL PROGRAM
Plenary Lectures :
The overall aim of the Plenary Session is to present the alternative routes
to VLSI fabrication at sub quarter micron sizes.
Takashi MATSUZAKA, Hitachi, Japan
"Present position and future status of electron beam lithography in VLSI
fabrication"
Toyoki KITAYAMA, Mitsubishi, Japan
"X-ray lithography for quarter micron and below"
Steve WHITTEKOEK, ASML, Netherlands
"Optical lithography for VLSI production"
Invited Papers :
7 or 8 presentations will introduce the selected topics of the conference,
including:
Andrew HAWRYLIW, Compugraphics, Scotland
"Mask-making, the routes to the year 2000"
Evelyn HU, UCSB, USA
"Dry etch damage in III-V semiconductors"
INTERNATIONAL STEERING COMMITTEE
S.P. Beaumont, Scotland, UK
W. Fallmann, Techn. Universitaet Wien, Austria
=46. Hohn, IBM, USA
D. Kern, Universit=E4t T=FCbingen,
H. W. Lehmann, Paul Scherrer Institut Z=FCrich
S. Namba, Japan
A. Paoletti, University of Rome
J. Perrocheau, ELISA, France
S. Radelaar, Delft University of Technology
D. Stephani, Siemens, Germany
L. Van den hove, IMEC, Belgium
ORGANISING COMMITTEE
S.P. Beaumont, Glasgow, Conference Chairman
C.D.W. Wilkinson, Glasgow, Program Chairman
C.K. Clugston, Glasgow, Secretary
H. Ahmed, Cambridge
A. Smith, Oxford Instruments
C. Reeves, Edinburgh
SECTION HEADS / PROGRAM COMMITTEE
U. Behringer (D) R. Lawes (UK)
W.H. Br=FCnger (D) H. Lehmann (CH)
=46. Cerrina (USA) H. L=F6schner (A)
M. Chaker (Canada) B. Martin (UK)
J. Cleaver (UK) S. Okasaki (Japan)
P. Crawley (UK) P. Parrens (F)
N. De Rooij (CH) I. Rangelow (D)
A. Dinnis (UK) J. Reithmaier (D)
W. Ehrfeld (D) H. Smith (USA)
C. Ehrlich (D) P. Sudraud (F)
B. Fay (USA) G. Taylor (USA)
K. Gamo (Japan) S. Tedesco (F)
M. Gentilli (I) L. Van den Hove (B)
M. Hatzakis (GR) P. Vettiger (CH)
D. Hauden (F) A. Weill (F)
E. Hu (USA) C. Wilkinson (UK)
D. Kern (D) S. Wittekoeck (NL)
H. Launois (F)
SCOPE OF THE CONFERENCE
ELECTRON BEAM LITHOGRAPHY: Advanced electron beam concepts; electron
optics, system design, modelling, simulation, proximity correction...
OPTICAL LITHOGRAPHY: UV, Deep UV, Extreme UV, Optic modelling and
simulation. Phase shift mask technology, holographic methods, laser beam
lithography, alignment schemes...
X-RAY LITHOGRAPHY: Sources, X-Ray optics, X-Ray lithographic systems, mask
fabrication, precision alignment procedures...
ION BEAM LITHOGRAPHY: Ion sources, ion optics,ion beam lithographic
systems, mask fabrication, modelling, simulation...
RESISTS: New materials, surface imaging, self developing, dry developable,
dry coating, multilayer and inorganic resist, chemical amplification.
Applications, processing, characterisation, modelling of exposure and
development...
PATTERN TRANSFER: Dry etching, beam assisted etching and deposition,
lift-off techniques, local implantation, sputtering, modelling of
patterning and pattern transfer, dry etch damage...
MICROSYSTEM FABRICATION: Surface and bulk micro-machining, electroplating
and other microfabrication methods, new equipment associated to
microsystem...
NANOSCALE ENGINEERING, FABRICATION AND DEVICES: Physics, limits of
miniaturisation, nanomechanics, artificial nanostructures, characterisation
and applications of nanodevices...
=46LEXIBLE FABRICATION: "Minifab" concept of fabrication plant, based on
compatible processes and adaptable tools...
TECHNOLOGY CAD: Integrated device and process simulation techniques,
allowing the forecasting of the effects of technological changes on device
behavior...
MEASUREMENT, TESTING AND REPAIR: Metrology, inspection and repair of masks
and circuits, in situ measurements, online and offline controls...
GUIDELINES FOR PREPARING ABSTRACTS
The abstracts will form the basis for selection of papers for the
conference. They must clearly state:
* The purpose of the work.
* The manner and degree to which it advances the art.
* Specific results that have been obtained.
The degree to which the abstract deals with these issues will strongly
affect whether it will be selected for presentation at MNE. The most common
cause for rejection is a lack of specific results.
Authors are asked to submit a one-page abstract (text only) and one
additional page with figures, photographs or tables emphasising the results
of the work. The abstracts have to be suitable for direct reproduction.
Both, text and figures must fit within a frame of 150 x 215mm. Dot matrix
printer output is not acceptable. Lines should be single-spaced (6 li./in).
Start with the title of the abstract (in capitals) on line 1; the name(s)
of the author(s) should appear on line 3 (initials and surname only, do not
include titles, degrees, or other professional qualifications) with
affiliations starting on line 5. Give Phone and Fax numbers on lines 9 and
10 and write out the title again on line 12. The actual text of the
abstract should start on line 15.
DEADLINE FOR SUBMISSION OF ABSTRACTS:
JUNE 7, 1996
All submitted abstracts (title and text only!) will be distributed to
members of the International Program Committee to be considered for
selection. The final selection of papers to be presented will be made at a
meeting of the International Program Committee.
Authors will be notified of the acceptance of their contribution by July
28, 1996. All authors will be asked to prepare papers in camera-ready form
and to submit them at the beginning of the conference. They will receive
format and layout instructions from the publisher of the proceedings.
Papers will be reviewed before publication in the conference proceedings
which will appear as a special issue of Microelectronic Engineering.
MAILING ADDRESS FOR ABSTRACTS/ FURTHER INFORMATION:
Dr. Carol K. Clugston,
Nanoelectronics Research Centre,
Dept. of Electronics and Electrical Engineering,
University of Glasgow
Glasgow G12 8QQ
Scotland, UK
TELEPHONE: (44) 0141-330-6674
=46AX: (44) 0141-330-4907
e-mail: [log in to unmask]
Conference Location
The conference will take place in the magnificent Main Building of the
University of Glasgow,the second oldest University in Scotland and one of
the City's best known landmarks. Glasgow is within easy reach of some of
Scotland's most spectacular scenery and attractions, including historic
Castles, whisky distilleries and such celebrated golf courses as Turnberry
and St. Andrews.
Glasgow itself enjoys a reputation as one of Europe's most dynamic and
exuberant Cultural Capitals and in 1996 will host a major celebration of
the Visual Arts including a retrospective exhibition of the famous Glasgow
art nouveau designer and architect, Charles Rennie Mackintosh. 1996 also
marks the 200th anniversary of the death of the poet Robert Burns and
celebrations of his life will take place throughout the year.
Glasgow International Airport is located 20 minutes by taxi from the
conference location, and has direct flights to the USA and Europe.
Special Events
Sunday 22 September, evening: Registration and Party
Monday to Wednesday 23-25 September: Conference and Technical Exhibition in
University of Glasgow.
Monday Evening: Civic Reception hosted by the City of Glasgow
Tuesday Evening: Traditional Scottish Banquet in the Kelvingrove Museum
and Art Gallery
Industrial and Laboratory visits will also be arranged depending on interest=
.
Social Events for delegates and accompanying persons
Social events will be arranged including whisky "nosing" and tasting at a
distillery, a tour of the spectacular scenery of Loch Lomond, a tour of
Burns country or a visit to a historic castle.
We have also negotiated exceptional rates at the world famous Turnberry
Golf Course and Hotel, with guaranteed tee-off times, for delegates who
wish to spend a day or two golfing before or after the conference. (If
interested in golf, please e-mail C. Clugston for details of Turnberry as
early reservations are advisable).
Accommodation
Within walking distance of the University,there is an excellent choice of
accommodation for all budgets and we have arranged special rates for early
bookings.
Registration and Fees
Early registration and special student rates will be available.
Registration forms for the conference and social activities will be
distributed with the Final Call for Papers in April/May 1996. If you wish
to receive this mailing please e-mail or write to C. Clugston at the above
address.
Dr. Carol K. Clugston,
Nanoelectronics Research Centre,
Department of Electronics and Electrical Engineering,
University of Glasgow,
Glasgow G12 8QQ
Telephone: 0141-330-6674
=46ax: 0141-330-4907
e-mail: [log in to unmask]
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